Heterostructure and light-emitting device employing the same

ABSTRACT

Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.

FIELD OF THE INVENTION

The present disclosure relates in general to semiconductor lightemitting technology and, more particularly, to heterostructures forlight emitting devices or photodetectors, and to light emitting devicesand photodetectors with the heterostructures.

DESCRIPTION OF THE RELATED ART

Nitride compound semiconductors such as InN, GaN, AlN, and their ternaryand quaternary alloys depending on alloy composition enable ultraviolet(UV) emissions ranging from 410 nm approximately to 200 nm. Theseinclude UVA (400-315 nm), UVB (315-280 nm), and part of UVC (280-200 nm)emissions. UVA emissions lead to revolutions in curing industry, and UVBand UVC emissions owing to their germicidal effect are looking forwardto general adoption in food, water, and surface disinfection businesses.Compared to the traditional UV light sources, such as mercury lamps, UVlight emitters made of nitride compounds offer intrinsic merits. Ingeneral, nitride UV emitters are robust, compact, spectrum adjustable,and environmentally friendly. They offer high UV light intensity,facilitating an ideal disinfection/sterilization treatment for water,air, food and object surface. Further, nitride UV emitters can deliverintensity-modulated light output at high frequencies, up to a fewhundreds of mega-hertz, promising them to be innovative light sourcesfor Internet of Things, covert communications and bio-chemicaldetections.

The state-of-the-art UVC light-emitting diodes (LEDs) commonly adopt alaminate structure containing a c-plane sapphire or AlN as UVtransparent substrate, an AlN layer coated over the substrate serving asepitaxy template, and a set of AlN/AlGaN superlattice for dislocationand strain management. AlN/AlGaN superlattice and/or AlN templateenables growth of high-quality high-conductivity n-type AlGaN structure,as electron supplier layer injecting electrons into the followingAlGaN-based multiple quantum well (MQW) active-region. On the other sideof the MQW active-region is a p-type AlGaN structure consisting ofp-type AlGaN layers for electron-blockage, hole injection, hole supplyand p-type ohmic contact formation. A conventional AlGaN UV LEDstructures can be found in the reference. (e.g., “Milliwatt power deepultraviolet light-emitting diodes over sapphire with emission at 278nm”, J. P. Zhang, et al, APPLIED PHYSICS LETTERS 81, 4910 (2002), thecontent of which is incorporated herein by reference in its entirety.).

As seen, a UVC LED may utilize numerous AlGaN layers of differentAl-compositions to form AlGaN heterostructures so as to realize certainfunctionalities. A most important functionality is electricalconduction, which becomes increasingly challenging for Al-richer AlGaNmaterials, as donor and acceptor activation energies increase withAl-composition, resulting in deficiency of free electron and holecarriers. Semiconductor superlattice, a special type semiconductorheterostructure, made by periodically alternately stacking at least twosemiconductors of different bandgaps and taking the advantage ofconduction and valence band edge discontinuities can enhance dopantactivation to improve electrical conductivity (see, for example,“Enhancement of deep acceptor activation in semiconductors bysuperlattice doping”, E. F. Schubert, W. Grieshaber and I. D. Goepfert,Appl. Phys. Lett. 69, 9 (1996)). P-type Al_(x)Ga_(1-x)N/Al_(y)Ga_(1-y)Nsuperlattice has been proposed to replace conventional p-type AlGaNlayers for improved conductivity (e.g. U.S. Pat. Nos. 5,831,277,6,104,039, and 8,426,225, the contents of which are incorporated hereinby reference in their entirety).

The present invention discloses design rules for AlGaN heterostructuresof improved conductivity and quantum confinement in regard to dopantconcentration and interface charge density.

SUMMARY OF THE INVENTION

A first aspect of the present invention provides a heterostructure for alight emitting device or a photodetector, which includes one or morep-type doped AlGaN layers, each of the one or more p-type doped AlGaNlayers containing one or more sheets of positive charge insertedtherein, wherein a distance between two adjacent sheets of positivecharge is larger than a depletion depth of a depletion zone generated byany one of the two adjacent sheets of positive charge.

Optionally, the depletion depth of a depletion zone generated by any oneof the one or more sheets of positive charge is less than 10 nm.

The one or more sheets of positive charge can be formed by Si-deltadoping with a sheet doping density of 1×10¹¹-1×10¹³ cm⁻².

The p-type doped AlGaN layer to be placed closest to an active-region ofthe light emitting device or photodetector, compared with the rest ofthe one or more p-type doped AlGaN layers, may contain more sheets ofpositive charge, higher Al-composition, and larger thickness.

The heterostructure may further include a plurality of p-type dopedAlGaN layers, which do not contain a sheet of positive charge therein,alternately stacked with the one or more p-type doped AlGaN layerscontaining one or more sheets of positive charge, wherein anAl-composition of each of the plurality of p-type doped AlGaN layerswhich do not contain a sheet of positive charge therein is higher thanan Al-composition of neighboring p-type doped AlGaN layers containingone or more sheets of positive charge, or an Al-composition of each ofthe plurality of p-type doped AlGaN layers which do not contain a sheetof positive charge therein is lower than an Al-composition ofneighboring p-type doped AlGaN layers containing one or more sheets ofpositive charge.

Optionally, the sheet of positive charge divides each of the one or morep-type doped AlGaN layers containing one or more sheets of positivecharge into a thinner prior zone and a thicker post zone.

The heterostructure may further include another p-type doped AlGaN layeron which the one or more p-type doped AlGaN layers are formed, whereinthe another p-type doped AlGaN layer has an Al-composition in the rangeof 0.6-0.8 and a thickness in the range of 1.0-5.0 nm.

A second aspect of the present invention provides a heterostructure fora light emitting device or a photodetector, which includes alternatelystacked p-type doped AlGaN barriers and p-type doped AlGaN wells,wherein a thickness of each of the AlGaN barriers and the AlGaN wellsrespectively satisfies:

${h_{i} \leq {- \frac{\sigma_{i}}{2\rho_{0i}}}},$

where h_(i) is the thickness of i^(th) AlGaN barrier or well; σ_(i) issheet charge density of a sheet of charge on a surface of the i^(th)AlGaN barrier or well, the surface being oppositely charged in regard tonet activated dopant in the i^(th) AlGaN barrier or well; andρ_(0i)=eN_(Di)−eN_(Ai) is maximal bulk charge density, allowed byapplied doping concentration, in a depletion zone of the i^(th) AlGaNbarrier or well generated by the sheet of charge, N_(Di) and N_(Ai) aredonor and acceptor concentrations, respectively, in the i^(th) AlGaNbarrier or well, e is electric elementary charge.

Optionally, at least one of the AlGaN barriers includes an AlGaNprior-barrier spacer, an AlGaN post-barrier spacer, and an AlGaN mainbarrier sandwiched between the AlGaN prior-barrier spacer and the AlGaNpost-barrier spacer, wherein an Al-composition of the AlGaNprior-barrier spacer and an Al-composition of the AlGaN post-barrierspacer are different than an Al-composition of the AlGaN main barrier,and a thickness of the AlGaN prior-barrier spacer and a thickness of theAlGaN post-barrier spacer are smaller than a thickness of the AlGaN mainbarrier.

Optionally, a thickness of the AlGaN prior-barrier spacer and athickness of the AlGaN post-barrier spacer are in the range of 0.1 nm to1.5 nm.

Optionally, the Al-composition of the AlGaN prior-barrier spacer and theAl-composition of the AlGaN post-barrier spacer are higher than theAl-composition of the AlGaN main barrier.

Optionally, the AlGaN prior-barrier spacer and the AlGaN post-barrierspacer are made of AlN and have a thickness in the range of 0.26-0.52nm, respectively.

Optionally, the Al-composition of the AlGaN prior-barrier spacer and theAl-composition of the AlGaN post-barrier spacer are lower anAl-composition of adjacent AlGaN well.

Optionally, the AlGaN prior-barrier spacer and the AlGaN post-barrierspacer are made of GaN and have a thickness in the range of 0.1-0.52 nm,respectively.

Optionally, the Al-composition of the AlGaN prior-barrier spacer ishigher than the Al-composition of the AlGaN main barrier and theAl-composition of the AlGaN post-barrier spacer is lower anAl-composition of adjacent AlGaN well; or the Al-composition of theAlGaN post-barrier spacer is higher than the Al-composition of the AlGaNmain barrier and the Al-composition of the AlGaN prior-barrier spacer islower an Al-composition of adjacent AlGaN well.

The heterostructure may further include another p-type doped AlGaNbarrier on which the alternately stacked p-type doped AlGaN barriers andp-type doped AlGaN wells are formed, wherein the another p-type dopedAlGaN barrier contains a main barrier, which is to be in contact with alast quantum barrier of a MQW active-region of the light emitting deviceor photodetector, and a post-barrier spacer on which a p-type dopedAlGaN barrier of the alternately stacked p-type doped AlGaN barriers andp-type doped AlGaN wells is formed.

A third aspect of the present invention provides a multiple quantum wellstructure for a light emitting device or a photodetector, which includesalternately stacked AlGaN barriers and AlGaN wells, wherein a thicknessof each of the AlGaN barriers and the AlGaN wells respectivelysatisfies:

${h_{i} \leq {- \frac{\sigma_{i}}{2\rho_{0i}}}},$

where h_(i) is the thickness of i^(th) AlGaN barrier or well; σ_(i) issheet charge density of a sheet of charge on a surface of the i^(th)AlGaN barrier or well, the surface being oppositely charged in regard tonet activated dopant in the i^(th) AlGaN barrier or well; andρ_(0i)=eN_(Di)−eN_(Ai) is maximal bulk charge density, allowed byapplied doping concentration, in a depletion zone of the i^(th) AlGaNbarrier or well generated by the sheet of charge, N_(Di) and N_(Ai) aredonor and acceptor concentrations, respectively, in the i^(th) AlGaNbarrier or well, e is electric elementary charge.

Optionally, one or more of the AlGaN wells includes an n-type dopedAlGaN prior-well spacer, an n-type doped AlGaN post-well spacer, and anAlGaN main well sandwiched between the n-type doped AlGaN prior-wellspacer and the n-type doped AlGaN post-well spacer, wherein anAl-composition of the n-type doped AlGaN prior-well spacer and anAl-composition of the n-type doped AlGaN post-well spacer are differentthan an Al-composition of the AlGaN main well, and a thickness of then-type doped AlGaN prior-well spacer and a thickness of the n-type dopedAlGaN post-well spacer are smaller than a thickness of the AlGaN mainwell and a thickness of adjacent AlGaN barrier.

Optionally, the n-type doped AlGaN prior-well spacer and the n-typedoped AlGaN post-well spacer are Si-doped with a doping concentration of1.0-8.0×10¹⁸ cm⁻³, respectively, the AlGaN main well is undoped orSi-doped with a doping concentration less than 5.0×10¹⁷ cm⁻³, at leastone of the AlGaN barriers is Si-doped with a doping concentration of1.0-8.0×10¹⁸ cm⁻³.

Optionally, a thickness of the n-type doped AlGaN prior-well spacer anda thickness of the n-type doped AlGaN post-well spacer are in the rangeof 0.1 nm to 0.52 nm, respectively.

Optionally, the Al-composition of the n-type doped AlGaN prior-wellspacer and the Al-composition of the n-type doped AlGaN post-well spacerare higher than an Al-composition of adjacent AlGaN barrier.

Optionally, the n-type doped AlGaN prior-well spacer and the n-typedoped AlGaN post-well spacer are made of AlN and have a thickness in therange of 0.1-0.52 nm, respectively.

Optionally, the Al-composition of the n-type doped AlGaN prior-wellspacer and the Al-composition of the n-type doped AlGaN post-well spacerare lower the Al-composition of the AlGaN main well.

Optionally, the n-type doped AlGaN prior-well spacer and the n-typedoped AlGaN post-well spacer are made of GaN and have a thickness in therange of 0.1-0.52 nm, respectively.

Optionally, the Al-composition of the n-type doped prior-well spacer ishigher than an Al-composition of adjacent AlGaN barrier and theAl-composition of the n-type doped AlGaN post-well spacer is lower theAl-composition of the AlGaN mail well; or the Al-composition of then-type doped AlGaN post-well spacer is higher than an Al-composition ofthe AlGaN barrier and the Al-composition of the AlGaN prior-well spaceris lower the Al-composition of the AlGaN main well.

Optionally, one of the n-type doped AlGaN prior-well spacer and then-type doped AlGaN post-well spacer is made of AlN and the other is madeof GaN, and have a thickness in the range of 0.1-0.52 nm, respectively.

The multiple quantum well structure may further include an undoped AlGaNbarrier formed on one of the AlGaN wells on one side and to be incontact with a p-type structure of the light emitting device orphotodetector on the other side.

Optionally, one or more of the AlGaN barriers contains one or more sheetof positive charge, and a distance between two adjacent sheets ofpositive charge is larger than a depletion depth of a depletion zonegenerated by any one of the two adjacent sheets of positive charge.

Optionally, the sheets of positive charge are formed via Si-delta dopingwith a sheet doping density equal to or greater than 10¹² cm⁻².

Optionally, each of the AlGaN barriers that contain the sheet ofpositive charge comprises a Si-doped layer with a doping concentrationof 1.0-8.0×10¹⁸ cm⁻³ and an undoped layer separated by the sheet ofpositive charge.

Optionally, a thickness of the Si-doped layer of each of the AlGaNbarriers that contain the sheet of positive charge is in the range of6-10 nm, respectively, and a thickness of the undoped layer of each ofthe AlGaN barriers that contain the sheet of positive charge is in therange of 2-4 nm, respectively.

The multiple quantum well structure may further include an undoped AlGaNbarrier formed on one of the AlGaN wells on one side and to be incontact with a p-type structure of the light emitting device orphotodetector on the other side.

Optionally, one or more of the AlGaN wells includes an n-type dopedAlGaN prior-well spacer, an n-type doped AlGaN post-well spacer, and anAlGaN main well sandwiched between the n-type doped AlGaN prior-wellspacer and the n-type doped AlGaN post-well spacer, wherein anAl-composition of the n-type doped AlGaN prior-well spacer and anAl-composition of the n-type doped AlGaN post-well spacer are differentthan an Al-composition of the AlGaN main well, and a thickness of then-type doped AlGaN prior-well spacer and a thickness of the n-type dopedAlGaN post-well spacer are smaller than a thickness of the AlGaN mainwell and a thickness of adjacent AlGaN barrier.

Optionally, the n-type doped AlGaN prior-well spacer and the n-typedoped AlGaN post-well spacer are Si-doped with a doping concentration of1.0×10¹⁸-8.0×10¹⁸ cm⁻³, respectively, the AlGaN main well is undoped orSi-doped with a doping concentration less than 5.0×10¹⁷ cm⁻³, at leastone of the AlGaN barriers is Si-doped with a doping concentration of1.0×10¹⁸-8.0×10¹⁸ cm⁻³.

Optionally, a thickness of the n-type doped AlGaN prior-well spacer anda thickness of the n-type doped AlGaN post-well spacer are in the rangeof 0.1 nm to 0.52 nm, respectively.

Optionally, the Al-composition of the n-type doped AlGaN prior-wellspacer and the Al-composition of the n-type doped AlGaN post-well spacerare higher than an Al-composition of adjacent AlGaN barrier.

Optionally, the Al-composition of the n-type doped AlGaN prior-wellspacer and the Al-composition of the n-type doped AlGaN post-well spacerare lower the Al-composition of the AlGaN main well.

Optionally, the Al-composition of the n-type doped prior-well spacer ishigher than an Al-composition of adjacent AlGaN barrier and theAl-composition of the n-type doped AlGaN post-well spacer is lower theAl-composition of the AlGaN mail well; or the Al-composition of then-type doped AlGaN post-well spacer is higher than an Al-composition ofthe AlGaN barrier and the Al-composition of the AlGaN prior-well spaceris lower the Al-composition of the AlGaN main well.

A fourth aspect of the present invention provides a heterostructure fora light emitting device or a photodetector, which includes alternatelystacked n-type doped Al_(b)Ga_(1-b)N barriers and n-type dopedAl_(w)Ga_(1-w)N wells, wherein a thickness of each of the n-type dopedAl_(b)Ga_(1-b)N barriers and the n-type doped Al_(w)Ga_(1-w)N wellsrespectively satisfies:

${L_{i} \leq {\left( \frac{b - w}{0.2} \right)10^{13}\frac{1}{2N_{Di}} \times 10^{7}\mspace{14mu} {nm}}},$

where L_(i) is the thickness of the i^(th) Al_(b)Ga_(1-b)N barrier orAl_(w)Ga_(1-w)N well, N_(Di) is donor concentration (in cm⁻³) in thei^(th) Al_(b)Ga_(1-b)N barrier or Al_(w)Ga_(1-w)N well.

Optionally, the n-type doped Al_(b)Ga_(1-b)N barriers and n-type dopedAl_(w)Ga_(1-w)N wells are Si-doped with a doping concentration of8.0×10¹⁸-2.033 10¹⁹ cm⁻³, and b-w is equal to or larger than 0.15.

Optionally, one or more of the n-type doped Al_(b)Ga_(1-b)N barrierscontains a Si-delta doped zone.

Optionally, an n-type doped AlGaN prior-barrier spacer and an n-typedoped AlGaN post-barrier spacer are formed on two sides of at least oneof the n-type doped Al_(b)Ga_(1-b)N barriers, respectively, wherein anAl-composition of the n-type doped AlGaN prior-barrier spacer and anAl-composition of the n-type doped AlGaN post-barrier spacer aredifferent than an Al-composition of the at least one of the n-type dopedAl_(b)Ga_(1-b)N barriers, and a thickness of the n-type doped AlGaNprior-barrier spacer and a thickness of the n-type doped AlGaNpost-barrier spacer are smaller than a thickness of the least one of then-type doped Al_(b)Ga_(1-b)N barriers.

Optionally, a thickness of the n-type doped AlGaN prior-barrier spacerand a thickness of the n-type doped AlGaN post-barrier spacer are in therange of 0.1 nm to 1.5 nm.

Optionally, the Al-composition of the n-type doped AlGaN prior-barrierspacer and the Al-composition of the AlGaN post-barrier spacer arehigher than the Al-composition of the at least one of the n-type dopedAl_(b)Ga_(1-b)N barriers.

Optionally, the Al-composition of the AlGaN prior-barrier spacer and theAl-composition of the AlGaN post-barrier spacer are lower anAl-composition of adjacent n-type doped Al_(w)Ga_(1-w)N well.

Optionally, the Al-composition of the AlGaN prior-barrier spacer ishigher than the Al-composition of the at least one of the n-type dopedAl_(b)Ga_(1-b)N barriers and the Al-composition of the AlGaNpost-barrier spacer is lower an Al-composition of adjacent n-type dopedAl_(w)Ga_(1-w)N well; or the Al-composition of the AlGaN post-barrierspacer is higher than the Al-composition of the at least one of then-type doped Al_(b)Ga_(1-b)N barriers and the Al-composition of theAlGaN prior-barrier spacer is lower an Al-composition of adjacent n-typedoped Al_(w)Ga_(1-w)N well.

A fifth aspect of the present invention provides a p-type contactstructure for a light emitting device or a photodetector, whichincludes:

a first AlGaN barrier;

a first AlInGaN well formed on the first AlGaN barrier;

a second AlGaN barrier formed on first AlInGaN well; and

a second AlInGaN well formed on the second AlGaN barrier;

wherein a difference between an Al-composition of the first AlGaNbarrier and an Al-composition of the first AlInGaN well is equal to orlarger than 0.6, and a difference between an Al-composition of thesecond AlGaN barrier and an Al-composition of the second AlInGaN well isequal to or larger than 0.6.

Optionally, at least one of the first AlGaN barrier and the second AlGaNbarrier are made of AlN.

Optionally, at least one of the first AlInGaN well and the secondAlInGaN well are made of In_(x)Ga_(1-x)N, where x is equal to or smallerthan 0.3.

Optionally, a thickness of the first AlGaN barrier and a thickness ofthe second AlGaN barrier are in the range of 0.26-2.0 nm, respectively.

Optionally, a thickness of the first AlInGaN well and a thickness of thesecond AlInGaN well are in the range of 0.52-3.0 nm, respectively.

Optionally, the first AlInGaN well is p-type doped with a dopingconcentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³, and the second AlInGaN well isn-type doped with a doping concentration of 1.0×10¹⁹-1.533 10²⁰ cm⁻³.

Optionally, the first AlGaN barrier is p-type doped with a dopingconcentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³, and the second AlGaN barrier isp-type doped with a doping concentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³.

The p-type contact structure may further include a AlGaN layer on whichthe first AlGaN barrier is formed, wherein the AlGaN layer on which thefirst AlGaN barrier is formed has an Al-composition lower than theAl-composition of the first AlGaN barrier and in the range of 0.5-0.65,a thickness in the range of 2.0-5.0 nm, and is p-type doped with adoping concentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³.

A sixth aspect of the present invention provides a light emitting deviceas follows:

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and

an active-region sandwiched between the n-type AlGaN structure and thep-type AlGaN structure,

wherein the p-type AlGaN structure includes the heterostructureaccording to the first aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and

an active-region sandwiched between the n-type AlGaN structure and thep-type AlGaN structure,

wherein the p-type AlGaN structure includes the heterostructureaccording to the second aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and

an active-region sandwiched between the n-type AlGaN structure and thep-type AlGaN structure,

wherein the active-region includes the multiple quantum well structureaccording to the third aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure; and

an active-region sandwiched between the n-type AlGaN structure and thep-type AlGaN structure,

wherein the n-type AlGaN structure includes the heterostructureaccording to the fourth aspect of the present invention.

A light emitting device includes:

an n-type AlGaN structure;

a p-type AlGaN structure;

an active-region sandwiched between the n-type AlGaN structure and thep-type AlGaN structure; and

the p-type contact structure according to the fifth aspect of thepresent invention formed on the p-type AlGaN structure.

The heterostructure, the multiple quantum well structure and the p-typecontact structure according to the above first to fifth aspects of thepresent invention can be applied, individually or in any combinationthereof, to any suitable light emitting device or photodetector.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and constitute a part of thisapplication, illustrate embodiments of the invention and together withthe description serve to explain the principle of the invention. Likereference numbers in the figures refer to like elements throughout, anda layer can refer to a group of layers associated with the samefunction.

FIG. 1 illustrates a sheet of positive charge (via n-type delta doping)inserted into a thick p-type doped semiconductor.

FIG. 2 illustrates a p-type doped heterostructure with sheets ofopposite charge generated by polarization discontinuity.

FIG. 3A plots the electric potential curves around a sheet of positivecharge (σ=10¹³ e·cm⁻²) inserted in a p-type semiconductor with differentactivated dopant levels.

FIG. 3B plots the absolute value of the maximal potential drop generatedby a sheet of positive charge inserted in a p-type semiconductor withdifferent activated dopant levels.

FIG. 4 plots the depletion depth curves for different sheet chargedensities and activated dopant levels.

FIG. 5A schematically shows interface polarization sheet charge for afully strained Al_(x)Ga_(1-x)N thin film grown on a fully relaxedAl_(y)Ga_(1-y)N thick templated.

FIG. 5B plots the calculated polarization sheet charge densities forAl_(x)Ga_(1-x)N thin films coherently grown on thick fully relaxedAl_(y)Ga_(1-y)N template, wherein y≤x.

FIG. 5C plots the calculated polarization sheet charge densities forAl_(x)Ga_(1-x)N thin films coherently grown on thick fully relaxedAl_(y)Ga_(1-y)N template, wherein y≥x.

FIG. 6A schematically shows interface polarization sheet charge for afully strained In_(x)Ga_(1-x)N thin film grown on a fully relaxedIn_(x)Ga_(1-x)N thick templated.

FIG. 6B plots the calculated polarization sheet charge densities forIn_(x)Ga_(1-x)N thin films coherently grown on thick fully relaxedIn_(y)Ga_(1-y)N template, wherein y≤x.

FIG. 6C plots the calculated polarization sheet charge densities forIn_(x)Ga_(1-x)N thin films coherently grown on thick fully relaxedIn_(y)Ga_(1-y)N template, wherein y≥x.

FIG. 7 illustrates a cross-sectional view of a LED according to anembodiment of the present invention.

FIG. 8 illustrates a cross-sectional view of a p-type AlGaN structureaccording to an embodiment of the present invention.

FIG. 9A illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN structure shown in FIG. 8.

FIG. 9B illustrates the band diagram of the p-type AlGaN structure shownin FIG. 9A.

FIG. 10 illustrates a cross-sectional view of a p-type AlGaN structureaccording to another embodiment of the present invention.

FIG. 11 illustrates a cross-sectional view of a p-type AlGaNheterostructure according to an embodiment of the present invention.

FIG. 12A illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN heterostructure shown in FIG. 11.

FIG. 12B illustrates the band diagram of the p-type AlGaNheterostructure shown in FIG. 12A.

FIG. 13 illustrates a cross-sectional view of a p-type AlGaNheterostructure according to an embodiment of the present invention.

FIG. 14A illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN heterostructure shown in FIG. 13.

FIG. 14B illustrates the band diagram of the p-type AlGaNheterostructure shown in FIG. 14A.

FIG. 15 illustrates a cross-sectional view of a p-type AlGaNheterostructure according to an embodiment of the present invention.

FIG. 16A illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN heterostructure shown in FIG. 15.

FIG. 16B illustrates the band diagram of the p-type AlGaNheterostructure shown in FIG. 16A.

FIG. 16C illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN heterostructure shown in FIG. 15.

FIG. 16D illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN heterostructure shown in FIG. 15.

FIG. 17 illustrates a cross-sectional view of an MQW structure accordingto an embodiment of the present invention.

FIG. 18A illustrates one possible combination of dopant and compositionprofiles of the MQW structure shown in FIG. 17.

FIG. 18B illustrates the band diagram of the MQW structure shown in FIG.18A.

FIG. 19A illustrates dopant and composition profiles of a prior artAlGaN/AlGaN MQW.

FIG. 19B illustrates the band diagram of the prior art AlGaN/AlGaN MQWshown in FIG. 19A.

FIG. 20 illustrates a cross-sectional view of an MQW structure accordingto an embodiment of the present invention.

FIG. 21A illustrates one possible combination of dopant and compositionprofiles of the MQW 30 shown in FIG. 20.

FIG. 21B illustrates one possible combination of dopant and compositionprofiles of the MQW 30 shown in FIG. 20.

FIG. 21C illustrates one possible combination of dopant and compositionprofiles of the MQW 30 shown in FIG. 20.

FIG. 22 illustrates a cross-sectional view of an n-type AlGaNheterostructure according to an embodiment of the present invention.

FIG. 23A illustrates one possible combination of dopant and compositionprofiles of the n-type AlGaN heterostructure shown in FIG. 20.

FIG. 23B illustrates the band diagram of the n-type AlGaNheterostructure shown in FIG. 21A.

FIG. 24 illustrates a cross-sectional view of an n-type AlGaNheterostructure according to an embodiment of the present invention.

FIG. 25 illustrates a cross-sectional view of a p-type AlGaN/n-typeAlInGaN heterostructure according to an embodiment of the presentinvention.

FIG. 26A illustrates one possible combination of dopant and compositionprofiles of the p-type AlGaN/n-type AlInGaN heterostructure shown inFIG. 23.

FIG. 26B illustrates the band diagram of the p-type AlGaN/n-type AlInGaNheterostructure shown in FIG. 24A.

DETAILED DESCRIPTION OF EMBODIMENTS

Throughout the specification, the term group III nitride in generalrefers to metal nitride with cations selecting from group IIIA of theperiodic table of the elements. That is to say, III-nitride includesAlN, GaN, InN and their ternary (AlGaN, InGaN, AlN) and quaternary(AlInGaN) alloys. In this specification, a quaternary can be reduced toa ternary for simplicity if one of the group III elements issignificantly small so that its existence has marginal or negligibleeffect on the overall material characteristics such as lattice constant,bandgap and conductivity. For example, if the In-composition in aquaternary AlInGaN is significantly small, smaller than 1%, then thisAlInGaN quaternary can be shown as ternary AlGaN for simplicity. Usingthe same logic, a ternary can be reduced to a binary for simplicity ifone of the group III elements is significantly small. For example, ifthe In-composition in a ternary InGaN is significantly small, smallerthan 1%, then this InGaN ternary can be shown as binary GaN forsimplicity. Group III nitride may also include small amount oftransition metal nitride such as TiN, ZrN, HfN with molar fraction notlarger than 10%. For example, III-nitride or nitride may includeAl_(x)In_(y)Ga_(z)Ti_((1-x-y-z))N, Al_(x)In_(y)Ga_(z)Zr_((1-x-y-z))N,Al_(x)In_(y)Ga_(z)Hf_((1-x-y-z))N, with (1-x-y-z)≤10%.

A semiconductor can be doped with donors, or acceptors, and thesemiconductor is called n-type or p-type doped, or n- orp-semiconductor, respectively. Donors and acceptors respectively releasecarrier electrons and holes into the host semiconductor, therefore,activated or ionized donors and acceptors are positive and negativeimmobile charged ions sitting in the host semiconductor lattice,respectively.

In general, two semiconductors of different bandgap width (usually ofdifferent lattice constant too) epitaxially formed on one another form aheterostructure. Light emitting devices such as light emitting diodes(LEDs) and laser diodes employ numerous heterostructures, for strainmanagement, dislocation blockage, carrier confinement and lightgeneration. Two special heterostructures, namely, quantum well andsuperlattice are widely used in LEDs. Generally speaking, alight-emitting device such as an LED can include an n-type AlGaNstructure made of n-type AlGaN heterostructure, a p-type AlGaN structuremade of p-type AlGaN heterostructure, and a light-emittingheterostructure active-region made of multiple quantum well (MQW)sandwiched between the n-type AlGaN structure and the p-type AlGaNstructure.

In the following contents, wurtzite c-plane ((0002) plane) nitridelight-emitting devices or structures are used as examples to elucidatethe principle and spirit of the present invention. The teachings in thisspecification and given by the following embodiments can be applied tonon-c-plane nitride semiconductors, II-VI semiconductors and othersemiconductor devices.

Illustration in FIG. 1 shows a sheet of positive charge inserted into athick p-type doped semiconductor, which according to an embodiment ofthis invention is a p-type doped (e.g. Mg-doped) AlGaN thick layer. Herethe positive sheet charge can be achieved via n-type delta doping,usually realized via simultaneously opening n-type dopant source andgroup V source (e.g., ammonia or nitrogen) while closing group IIIsources (e.g., Al and Ga) during AlGaN epitaxial growth. The n-typedopants, such as Si, O, or Ge atoms, occupying Al, and/or Ga latticepositions in AlGaN serving as donors, ionize into positive immobilecharges via releasing mobile carrier electrons. Similarly, negativesheet charge can be achieved via p-type delta doping, realized viasimultaneously opening p-type dopant source and group V source whileclosing group III sources during AlGaN epitaxial growth. The p-typedopants, such as Mg atoms, occupying Al and/or Ga lattice positions inAlGaN serving as acceptors, ionize into negative immobile charges viareleasing mobile carrier holes. In practice, delta doping can also beequivalently realized via heavily doping a very thin layer. For example,doping a 2-nm-thick layer to 5×10¹⁹ cm⁻³, or 1-nm-thick layer to 10²⁰cm⁻³ is equivalent to a delta doping of sheet density of 10¹³ cm⁻².

Referring to FIG. 1, the electric field strength E(r) and electricpotential U(r) in the vicinity of a sheet of charge can be calculatedusing Gauss's law considering the left-right symmetry around the sheetcharge and assuming the lateral size of the sheet of charge issignificantly large than the distance to the sheet charge (r) thereforethe sheet of charge being treated as an infinite sheet of charge.

$\begin{matrix}{{{E(r)} = {\frac{\sigma}{2ɛ} + \frac{\rho \; r}{ɛ}}},{and}} & \left( {{eq}.\mspace{14mu} 1} \right) \\{{U(r)} = {{{- \frac{e\; \sigma}{2ɛ}}r} - {\frac{e\; \rho}{2ɛ}r^{2}}}} & \left( {{eq}.\mspace{14mu} 2} \right)\end{matrix}$

where σ, ε, ρ, r and e are respectively the sheet charge density,permittivity of host AlGaN layer, bulk charge density, distance to thesheet charge, and electric elementary charge. In a doped semiconductor,bulk charge density is the net charge density produced by activateddonors and acceptors, i.e., ρ=eN_(D) ⁺−eN_(A) ⁻+ep−en, where N_(D) ⁺,N_(A) ⁻, p, and n are concentrations of ionized donor, acceptor, freehole and electron respectively. In the neutral zone, bulk charge densityis zero. In the depletion zone (no free carriers allowed), ρ=eN_(D)⁺−eN_(A) ⁻. Note that in the depletion zone,

ρ=eN _(D) ⁺ −eN _(A) ⁻≤ρ₀ =eN _(D) −eN _(A)  (eq. 3)

due to insufficient dopant activation if dopant activation energy islarger than thermal energy (here N_(D) and N_(A) are donor and acceptordopant concentrations, respectively.).

If the sheet of charge is oppositely charged in regard to the netactivated dopant, the sheet of charge will enhance the dopant'sactivation, via electrically repelling carriers away from the dopants.This generates a carrier depletion zone around the sheet of charge. Theboundary between the depletion zone and the neutral zone, r₀, at whichthe electric field is zero (E(r)=0), is given by:

$\begin{matrix}{r_{0} = {- \frac{\sigma}{2\rho}}} & \left( {{eq}.\mspace{14mu} 4} \right)\end{matrix}$

And the depletion depth, L_(d), is then:

$\begin{matrix}{L_{d} = {{2r_{0}} = {- \frac{\sigma}{\rho}}}} & \left( {{eq}.\mspace{14mu} 5} \right)\end{matrix}$

The depletion depth curves are calculated according to eq. 5 and plottedin FIG. 4 for a few exemplary bulk charge densities with the sheetcharge density ranging from 10¹¹-10¹⁴ e·cm⁻². As seen, depending oncharge allocation, the depletion depth ranges from sub-nanometers to afew hundreds of nanometers.

The maximal potential drop, ΔU_(max), occurs at the depletion edge where

$\begin{matrix}{{r_{0} = {- \frac{\sigma}{2\rho}}},{{\Delta \; U_{\max}} = {{{U\left( {- \frac{\sigma}{2\rho}} \right)} - {U(0)}} = \frac{e\; \sigma^{2}}{8{ɛ\rho}}}}} & \left( {{eq}.\mspace{14mu} 6} \right)\end{matrix}$

The maximal potential drop can be significant, promising for enhancementof deep acceptors' activation in wide bandgap materials such as AlGaN.Plotted in FIG. 3A are some potential curves around a sheet of charge(σ=10¹³ e·cm⁻²) with different bulk charge densities (ρ=−5×10¹⁸,−1×10¹⁹, −2×10¹⁹ e·cm⁻³). As seen, maximal potential drops of a fewhundreds of milli-electron-voltage (meV) are realized. More general, theabsolute values of the maximal potential drops predicted by eq. 6 areplotted in FIG. 3B. Combining FIGS. 3B and 4, it is desirable to havelarge maximal potential drop with small depletion depth, for the sake ofvertical conduction. This is achievable by using high sheet chargedensity and high dopant concentration. For example, for σ=4×10¹³ e·cm⁻²and N_(A) ⁻=−2×10²⁰ e·cm⁻³ the depletion depth is only 2 nm and themaximal potential drop is 213 meV. This will greatly enhance deepacceptor activation within AlGaN material. For σ≥6×10¹³ cm⁻², regardlessof dopant level, the maximal potential drop will exceed 500 meV. Thismeans that even heavily Mg-doped AlN will have surface hole accumulationand become conductive, as Mg-acceptor in AlN possesses of activationenergy of approximately 500 meV.

As mentioned previously, infinite sheet of charge can be realized viadelta doping, so, n-type and p-type delta doping can introduce positiveand negative sheet charges, respectively. Another approach to obtaininfinite sheet of charge is to introduce polarization discontinuity, asσ=−{right arrow over (P)}·{right arrow over (n)}({right arrow over (P)}and {right arrow over (n)} are polarization and surface normal vectors,respectively), any discontinuity in polarization vector at interface canresult in interface sheet charge. Illustrated in FIG. 2 are threeinfinite sheets of charge, inserted in p-type doped AlGaN, one sheet ofpositive charge located in the center and two sheets of negative chargeat the edge. This can be realized by an AlGaN heterostructure of twohigher Al-content AlGaN layers sandwiching a lower Al-content AlGaNlayer. Generally speaking, acceptors can be assisted to activateprovided that the electric field generated by the sheets of charge isstrong enough. More specifically, according to the present invention, ifthe maximal potential drop is close to (within thermal energy), orlarger than the acceptor activation energy, and the depletion depth isless than a few nanometers allowing for quantum tunneling, the acceptorswill be sufficiently activated. Upon activation, free holes are pushedaway from the sheet of positive charge towards the sheets of negativecharge, leading to hole accumulation or two-dimensional hole gas (2DHG)formation in vicinity of the sheets of negative charge.

By symmetry, even though not explicitly shown, the AlGaN heterostructureshown in FIG. 2 can be n-type doped instead of p-type doped. In thiscase, if the maximal potential drop is close to (within thermal energy),or larger than the donor activation energy, and the depletion depth iswithin a few nanometers allowing for quantum tunneling, the donors willbe sufficiently activated. Upon activation, free electrons are pushedaway from the sheets of negative charge towards the sheet of positivecharge, leading to electron accumulation or two-dimensional electron gas(2DEG) formation in vicinity of the sheet of positive charge.

According to one aspect of the present invention, to maximize electricfield assisted dopant activation and carrier accumulation, an individuallayer's (say i^(th) layer's) thickness (h_(i)) within a heterostructureis preferred to satisfy the inequality:

$\begin{matrix}{h_{i} \leq {- \frac{\sigma_{i}}{2\rho_{0i}}} \leq {- \frac{\sigma_{i}}{2\rho_{i}}}} & \left( {{eq}.\mspace{14mu} 7} \right)\end{matrix}$

where ρ_(i)=eN_(Di) ⁺−eN_(Ai) ⁻ is the bulk charge density in thedepletion zone of i^(th) layer (N_(Di) ⁺ and N_(Ai) ⁻ being therespective ionized donor and acceptor concentrations therein), σ_(i) isthe sheet charge density on i^(th) layer's surface being oppositelycharged in regard to the net activated dopant (σ_(i)) therein, andρ_(0i)=eN_(Di)−eN_(Ai) is the maximal charge density in the depletionzone allowed by doping (N_(Di) and N_(Ai) are the respective donor andacceptor concentrations of i^(th) layer).

The inequality given by eq. 7 basically requires that the i^(th) layer'sthickness (h_(i)) is within or at the boundary of the depletion zonegenerated by σ_(i) and ρ_(0i), guaranteeing maximal dopant activationwithin i^(th) layer and forming carrier accumulation at one surface ofi^(th) layer.

FIG. 5A illustrates a simple AlGaN heterostructure, with surface normalpointing along [0002] direction and containing a thick fully relaxedAl_(x)Ga_(1-x)N template and a thin fully strained Al_(y)Ga_(1-y)N,i.e., Al_(y)Ga_(1-y)N coherently formed on Al_(x)Ga_(1-x)N. Because ofcomposition difference there is piezoelectric and spontaneouspolarization induced interface sheet charge. Using parameters given byE. T. Yu et al (“Spontaneous and piezoelectric polarization in nitrideheterostructures” (by E. T. Yu, chapter 4, III-V Nitride Semiconductors:Applications and Devices, edited by E. T. Yu, and O. Manasreh, publishedin 2003 by Taylor & Francis), the Al_(y)Ga_(1-y)N/Al_(x)Ga_(1-x)Ninterface charge densities (σ) are calculated and plotted in FIGS. 5Band 5C, respectively for y≥x and y≤x.

In FIG. 5B, where y≥x, meaning high-Al-composition thin AlGaN film iscoherently formed on low-Al-composition thick AlGaN template, positiveinterface sheet charge is generated at the interface. In FIG. 5C, wherey≤x, meaning low-Al-composition thin AlGaN film is coherently formed onhigh-Al-composition thick AlGaN template, negative sheet charge isgenerated at the interface. For this simple heterostructure, theinterface sheet charge density can be approximately described by:

$\begin{matrix}{\sigma \cong {\left( \frac{y - x}{0.2} \right)10^{13}{e \cdot {cm}^{- 2}}}} & \left( {{eq}.\mspace{14mu} 8} \right)\end{matrix}$

where y and x being Al-compositions of the thin AlGaN film and the thickAlGaN template, respectively.

FIG. 6A illustrates a simple InGaN heterostructure, with surface normalpointing to direction and containing a thick fully relaxedIn_(x)Ga_(1-x)N template and a thin fully strained In_(y)Ga_(1-y)N,i.e., In_(y)Ga_(1-y)N coherently formed on In_(x)Ga_(1-x)N. TheIn_(y)Ga_(1-y)N/In_(x)Ga_(1-x)N interface charge densities (σ) arecalculated and plotted in FIGS. 6B and 6C, respectively for y≥x and y≤x.

In FIG. 6B, where y≥x, meaning high-In-composition thin InGaN film iscoherently formed on low-In-composition thick InGaN template, negativesheet charge is generated at the interface. In FIG. 6C, where y≤x,meaning low-In-composition thin InGaN film is coherently formed onhigh-In-composition thick InGaN template, positive sheet charge isgenerated at the interface. The interface sheet charge density can beapproximately described by:

$\begin{matrix}{\sigma \cong {{- \left( \frac{y - x}{0.1} \right)}10^{13}{e \cdot {cm}^{- 2}}}} & \left( {{eq}.\mspace{14mu} 9} \right)\end{matrix}$

where y and x being In-compositions of the thin InGaN film and the thickInGaN template, respectively.

With eqs. 6-9, it is possible to design better AlGaN/AlGaN, andInGaN/InGaN heterostructures for light-emitting devices.

Illustrated in FIG. 7 is a cross-sectional schematic view of a UV LED 1according to another aspect of the present invention. The structurestarts with a substrate 10, preferably being UV transparent and selectedfrom sapphire, AlN, SiC, and the like. Formed over substrate 10 is athin buffer layer 21, made of AlN or high-Al-composition AlGaN. A thicktemplate 22 is subsequently formed on buffer 21. Template 22 can be madeof a thick AlN or high-Al-composition AlGaN layer, for example, with athickness of 0.3-4.0 μm. Even though not shown in FIG. 7, a strainmanagement structure such as an Al-composition grading AlGaN layer or afew sets of AlN/AlGaN superlattices can be formed over template 22.Formed over template 22 is a thick n-AlGaN layer 23 for currentspreading, made of Si or Ge doped AlGaN of thickness 2.0-5.0 μm (such as3.0 μm) with dopant concentration from 2.0×10¹⁸-5.0×10¹⁸ cm⁻³. A heavilyn-type doped NtAlGaN heterostructure 24 is formed on n-AlGaN layer 23.Heterostructure 24 can be n-type doped to 8×10¹⁸-2×10 ¹⁹ cm⁻³ and itsdesign will be disclosed in details in the following contents. Formed onheterostructure 24 is a thin, lightly doped N⁻—AlGaN layer 25 (0.1-0.5μm such as 0.15 μm, n=2.5×10¹⁷-2×10¹⁸ cm⁻³), for reduction of currentcrowding and preparation of uniform current injection into the followingAl_(b)Ga_(1-b)N/Al_(w)Ga_(1-w)N MQW active-region 30. MQW 30 is made ofalternatingly stacked n-Al_(b)Ga_(1-b)N barrier and Al_(w)Ga_(1-w)N wellfor a few times, for example, for 3-8 times. The barrier thickness is inthe range of 8.0-16.0 nm, and the well thickness is 1.0-5.0 nm. Thetotal thickness of MQW 30 is usually less than 200 nm, for example,being 75 nm, 100 nm, or 150 nm. The n-Al_(b)Ga_(1-b)N barrier andAl_(w)Ga_(1-w)N well may have an Al-composition in the range of 0.3-1.0and 0.0-0.85, respectively, and the Al-composition difference of thebarrier and adjacent well is at least 0.10, 0.15, 0.2, 0.25, or 0.3(i.e., b-w≥0.10,0.15, 0.2, 0.25, or 0.3), or so to ensure a barrier-wellbandgap width difference (ΔE_(g)) at least 270 meV to secure quantumconfinement effect. More disclosure on MQW 30 will be provided inconnection to FIGS. 17, 18A, 18B, 20, 21A, 21B and 21C. Following MQW 30is a p-type AlGaN heterostructure 40, whose structure will be disclosedin details in the following contents. The general functionalities ofheterostructure 40 include electron-blockage, hole supply andhole-injection. Formed on heterostructure 40 is another AlInGaNheterostructure 498, serving as a p-type contact layer. Heterostructure498 will be disclosed in details in the following contents.

Also seen in FIG. 7, n-ohmic contact 51 is formed on the heavily n-typedoped heterostructure 24. It can be made of thin metal layer stacks suchas titanium/aluminum/titanium/gold (Ti/Al/Ti/Au) with respective layerthickness of 3-40/70-80/10-20/80-100 nm, for example 35/75/15/90 nm. Itcan also be made of thin vanadium/aluminum/vanadium/gold (V/Al/V/Au)with respective layer thickness of 3-80/70-150/10-50/20-800 nm, forexample 20/100/20/60 nm. Formed on n-ohmic contact 51 is n-contact 52and n-contact pad 5, made of thick metal layer such as 2-5 μm-thick goldlayer. Similarly, p-ohmic contact 61 is formed on and in contact toheterostructure 498. The metal scheme of p-ohmic contact 61 will bedisclosed in connection to the disclosure of heterostructure 498 in thefollowing contents. Formed on p-ohmic contact 61 is p-contact 62 andp-contact pad 6, made of thick metal layer such as 2-5 μm-thick goldlayer. The whole LED structure is then passivated by passivation layer70, except for the n- and p-contact pads 5 and 6 (passivation layer 70also covers the device sidewalls even though not explicitly shown inFIG. 7). Passivation layer 70 is preferably made of UV-transparentdielectric such as SiO₂, Al₂O₃, AlF₃, CaF₂, and MgF₂ et al.

Illustrated in FIG. 8 is a p-type AlGaN heterostructure 40 according toan embodiment of the present invention. In this embodiment,heterostructure 40 includes a Mg-doped AlGaN layer 401 inserted withmultiple sheets 402 of positive charge. Sheets 402 of positive chargeare formed via donor dopant delta doping (e.g., Si-delta doping). FIG.9A illustrates a possible combination of dopant and composition profilesof heterostructure 40 shown in FIG. 8, where the Mg-doping andAl-composition of AlGaN layer 401 are constant, and the sheet chargedensity of sheets 402 is also constant. FIG. 9B illustrates the banddiagram of the p-type AlGaN heterostructure 40 shown in FIG. 9A. Inother embodiments, the Mg-doping and Al-composition may be not constant,i.e., they may change along epitaxial direction. For example, theMg-doping and Al-composition may decrease or increase along epitaxialdirection. Also, the sheet charge densities of different sheets 402 maybe different.

Referring to FIG. 9B, the present invention requires that the distancebetween neighboring sheets 402 be larger than the maximal depletiondepth (L_(d0)) given by eq. 5., i.e.,

${{> L_{d\; 0}} = {- \frac{\sigma}{\rho_{0}}}},$

where σ is the sheet charge density generated by Si-delta doping, takento be the product of Si-delta doping sheet density and the elementarycharge, and ρ₀ is the product of the acceptor doping concentration andelectron's elementary charge (ρ₀=−eN_(A)). This requirement ensures thatneighboring depletion zones of neighboring sheets 402 do not overlap,and heterostructure 40 as a whole is not depleted. Also, the maximaldepletion depth around sheet 402 is less than 10 nm, for example, lessthan 5 nm, or less than 2 nm, allowing for sufficient carrier tunnelingor diffusion once an external bias is applied to heterostructure 40.These requirements set the design rules of heterostructure 40 for itsbulk acceptor dopant concentration, sheet donor dopant density and sheetdonor spatial arrangement.

Donor-delta doping density in heterostructure 40 is in the range of1×10¹¹-1×10¹³ cm⁻², such as 5×10¹¹-5×10¹² cm⁻², or equivalent. Forexample, it can be equivalent to a bulk doping concentration of1×10¹⁸-1×10²⁰ cm⁻³ for 1 nm thickness. Also, the more Mg-dopantconcentration, the more Si-delta doping density is allowed inheterostructure 40, as long as the design rules set above are fulfilled.For example, referring to FIG. 4, if the depletion depth is allowed for2 nm-thick, then a bulk Mg-doping level of 2×10¹⁹ cm⁻³ approximatelyallows for a maximal Si sheet density of 3.9×10¹² cm⁻² in sheets 402,and adjacent sheets 402 are to be placed more than 2 nm (e.g., 5 or 10nm) apart from each other.

According to embodiments of the present invention, inserting sheets ofpositive charge (via donor delta-doping) into p-type heterostructure 40can improve UV LED's reliability. It is well known that p-type dopant ingroup III nitrides can attract hydrogen atoms incorporation. Thesehydrogen atoms occupy interstitial sites of the nitride lattice and areoften positive charged, i.e., becoming H⁺. When a nitride LED is forwardbiased and in operation, the interstitial H⁺ in p-type nitride can gainpotential energy, which inevitably turns into kinetic energy and drivesH⁺ move towards the MQW active-region. Ions in the MQW active-region canscatter carriers and reduce radiative recombination probability, leadingto light-output efficiency degradation. This situation worsens if theinterstitial H⁺ concentration is high, electric field is strong, andmaterial quality is poor. These happen to be the exact cases for AlGaNbased UV LEDs, as compared to GaN based visible LEDs. Inserting multiplesheets of positive charge into p-type nitride can slow down theelectromigration of interstitial H⁺ and improve LEDs' reliability.

The heterostructure 40 shown in FIG. 8 is one single p-type AlGaN layerinserted with one or more sheets of positive charge.

Heterostructure 40 may also contain more than one p-AlGaN layer insertedwith multiple sheets of positive charge. Shown in FIG. 10 is aheterostructure 40 containing three Mg-doped AlGaN layers 403, 404, and405, each is inserted with one or more sheets of positive charge (4032,4042, and 4052) and the sheets of positive charge (4032, 4042, and 4052)divide each of the Mg-doped AlGaN layers 403, 404, and 405 into multiplezones (4031, 4041, and 4051), respectively. The thickness, composition,doping, and sheets of positive charge of AlGaN layers 403, 404, and 405may be different from each other. For example, AlGaN layer 403 may bethe thickest, of the highest Al-composition, and of the most sheets ofpositive charge if AlGaN layer 403 is the closest to MQW active-region30. AlGaN layer 404 may be of the second or the third highestAl-composition among heterostructure 40. Each of AlGaN layers 403, 404and 405, however, still follows the design rules outlined previously,i.e., distance between the neighboring sheets of positive charge shouldbe larger than the maximal depletion depth, and the maximal depletiondepth should be less than 10 nm, for example, less than 5 nm, or lessthan 2 nm.

Illustrated in FIG. 11 is a p-type AlGaN heterostructure 40 according toanother embodiment of the present invention, containing a Mg-doped highAl-composition AlGaN layer 41 which may have an Al-composition in therange of 0.6-0.8 and a thickness in the range of 1.0-5.0 nm, more thanone Mg-doped AlGaN layers (42, 44, 46, and 48) inserted with at leastone sheet of positive charge (422, 442, 462, and 482), and more than oneMg-doped AlGaN layers (43, 45, 47, and 49) separating AlGaN layers 42,44, 46, and 48. The sheets of positive charge 422, 442, 462, and 482divide the respective AlGaN layers (42, 44, 46, and 48) into a thinnerprior zone (421, 441, 461, and 481) and a thicker post zone (423, 443,463 and 483). In this embodiment, the Al-composition and Mg-doping maybe constant within an AlGaN layer, however, the Al-composition and layerthickness of different AlGaN layers are generally different. In aspecial case, AlGaN layers 42-49 may form a periodic structure such as asuperlattice, where layers 42, 44, 46, and 48 may be the barrier layersof a higher Al-composition (e.g., 0.60-0.85) and layers 43, 45, 47, and49 may be the well layers of a lower Al-composition (e.g., 0.50-0.70),or vice versa. The sheet charge design rules outlined previously stillhold for the sheets of positive charge 422, 442, 462, and 482, i.e., thedistance between neighboring sheets of positive charge should be largerthan the maximal depletion depth, and the maximal depletion depth shouldbe less than 10 nm, for example, less than 5 nm, or less than 2 nm.Different AlGaN layers 42, 44, 46, and 48 may have the same or differentAl-composition and thickness, and different AlGaN layers 43, 45, 47, and49 may have the same or different Al-composition and thickness.

FIG. 12A illustrates a possible combination of dopant and compositionprofiles of heterostructure 40 shown in FIG. 11, where the Mg-dopinglevel is constant within heterostructure 40, and Al-compositions ofAlGaN layers 42, 44, and 46 are higher forming barrier layers, andAl-compositions of AlGaN layers 43, 45, and 47 are lower forming welllayers, and sheets of positive charge (422, 442, and 462) are locatedwithin the barrier layers. Besides the Si-delta-doping resulted sheetsof positive charge (σ₃), there are also sheets of charge (94 ₀, −σ₀)induced by polarization discontinuity at AlGaN barrier/well interfaces.FIG. 12B illustrates band diagram of the p-type AlGaN heterostructure 40shown in FIG. 12A.

Illustrated in FIG. 13 is a p-type AlGaN heterostructure 40 according toanother embodiment of the present invention, containing a Mg-dopedAl-composition modulated AlGaN heterostructure. Specifically, it isformed by alternately stacking of AlGaN barriers (42″, 44″, 46″ and 48″)of an Al-composition in the range of 0.60-0.85 and AlGaN wells (43″,45″, 47″, and 49″) of an Al-composition in the range of 0.50-0.70.Different AlGaN barriers may have the same or different Al-compositionand thickness, and different AlGaN wells may have the same or differentAl-composition and thickness. Here each of the barrier and each of thewell may be of different Al-composition, doping concentration, andthickness. As discussed previously, for a heterostructure having manyindividual layers, each layer's thickness, doping and composition arenot independent parameters, instead, they satisfy the inequality givenby eq. 7 according to the present invention. Hence, the thickness of thei^(th) barrier, L_(Bi), satisfies:

${L_{Bi} \leq {- \frac{\sigma_{Bi}}{2\rho_{B\; 0i}}}},$

where σ_(Bi), as a function of composition discontinuity (see eq. 8), isthe sheet charge density on i^(th) barrier's surface being oppositelycharged in regard to the net activated dopant within i^(th) barrier, andρ_(B0i)=eN_(BDi)−eN_(BAi) is the maximal charge density in the barrierdepletion zone allowed by doping (N_(BDi) and N_(BAi) are the respectivedonor and acceptor concentrations of the i^(th) barrier). And thethickness of the j^(th) well, L_(Wj), satisfies:

${L_{Wj} \leq {- \frac{\sigma_{Wj}}{2\rho_{W\; 0j}}}},$

where σ_(Wj), as a function of composition discontinuity (see eq. 8), isthe sheet charge density on j^(th) well's surface being oppositelycharged in regard to the net activated dopant within j^(th) well, andρ_(W0j)=eN_(WDj)−eN_(WAj) is the maximal charge density in the welldepletion zone allowed by doping (N_(WDj) and N_(WAj) are the respectivedonor and acceptor concentrations of the j^(th) well).

A specific embodiment of AlGaN heterostructure 40 shown in FIG. 13 is anAl_(b)Ga_(1-b)N/Al_(w)Ga_(1-w)N superlattice uniformly doped with Mg ofconcentration N_(A) (cm⁻³). Therefore, the barrier and well thicknessesaccording to eqs. 7 and 8 satisfy: L_(B),

$L_{W} \leq {\left( \frac{b - w}{0.2} \right)10^{13}\frac{1}{2N_{A}} \times 10^{7}\mspace{14mu} {{nm}.}}$

For example, if b-w=0.2 and N₄=10¹⁹ cm⁻³, L_(B), L_(W)≤5 nm; if b-w=0.4and N_(A)=2×10¹⁹ cm⁻³, L_(B), L_(W)≤5 nm; et al.

FIG. 14A illustrates doping and composition profiles for a special,i.e., superlattice, embodiment of heterostructure 40 shown in FIG. 13,where the Mg doping may be constant or different for barriers and wellswithin heterostructure 40 (i.e., ρ_(B0i)=ρ_(W0j), or ρ_(B0i)≠ρ_(W0j)).FIG. 14B illustrates band diagram of the p-type AlGaN heterostructure 40shown in FIG. 14A.

Since barrier layers of heterostructure 40 are tilted by polarizationinterface charge in a way impeding carriers' vertical transport, barrierlayers can be thinner than well layers in cases where carrier verticaltransport weighs more than quantum confinement.

Illustrated in FIG. 15 is a p-type AlGaN heterostructure 40 according toanother embodiment of the present invention. It differs from theembodiment shown in FIG. 13 in the barrier layers. The heterostructure40 shown in FIG. 15 contains a first AlGaN barrier 42′ and more than oneAlGaN barriers (44′, 46′, 48′ as shown). The first barrier 42′, incontact with the last quantum barrier of the MQW active-region, containsa main barrier 422′ and a post-barrier spacer 423′. The other barriers(44′, 46′, 48′ as shown) respectively contain a main barrier and aprior-barrier spacer and a post-barrier spacer. For example, the secondbarrier 44′ contains a main barrier 442′ and a prior-barrier spacer 441′and a post-barrier spacer 443′, the third barrier 46′ contains a mainbarrier 462′ and a prior-barrier spacer 461′ and a post-barrier spacer463′, etc. A post-barrier spacer is in contact with its main barrier andits following well, a prior-barrier spacer is in contact with itsprecedent well and its main barrier. For example, post-barrier spacer423′ is in contact with its main barrier 422′ and its following well43′; prior-barrier spacer 441′ is in contact with its precedent well 43′and its main barrier 442′; post-barrier spacer 443′ is in contact withits main barrier 442′ and its following well 45′, etc.

The post- and prior-barrier spacers are made of p-type AlGaN withdifferent Al-compositions than those of the main barrier and well, sothat the main barrier and well can have different interface sheet chargedensities, allowing for more flexibility of designing heterostructure40. Post- and prior-barrier spacers are thinner than the main barrierand well. Post- and prior-barrier spacers may be of the same compositionor of different composition. Thickness of post- and prior-barrierspacers are optionally in the range of 0.1 nm to 1.5 nm, such as 0.5 nmto 1.2 nm, respectively. Al-composition of the post- and prior-barrierspacer can be in the range of 0.0-1.0, such as 0.10-0.95, respectively.Al-composition of the main barrier can be in the range of 0.60-0.85.

In an embodiment, the post- and prior-barrier spacers are of higherAl-composition than their main barrier. A combination of doping andcomposition profiles of this embodiment is illustrated in FIG. 16A, withits band diagram illustrated in FIG. 16B. As seen, in this embodiment,the j^(th) well is subjected to interface charge density σ_(Wj), whichis larger than σ_(Bi), the interface charge density experienced byi^(th) main barrier. This is true because the Al-composition differencebetween the spacer and well is larger than that between the spacer andmain barrier, and according to eq. 8, this will generate more sheetcharge on the well-spacer interface. In this embodiment, Mg acceptors inthe wells will have higher probability to activate. In one embodimentaccording to this aspect of the present invention, post- andprior-barrier spacers are made of 0.26-0.52 nm-thick AlN layer,respectively. AlN post- and prior-barrier spacers enhances electronblocking capability hence improves LED's reliability.

In another embodiment, the post- and prior-barrier spacers are of lowerAl-composition (such as 0.0-0.6, or 0.2-0.4) than adjacent wells (suchas 0.5-0.7). A combination of doping and composition profiles of thisembodiment is illustrated in FIG. 16C (band diagram not shown here). Inthis embodiment, the j^(th) well is subjected to interface chargedensity σ_(Wj), which is smaller than σ_(B1), the interface chargedensity experienced by i^(th) main barrier. This is true according toeq. 8, because the Al-composition difference between the spacer and mainbarrier is larger than that between the spacer and well. In thisembodiment, Mg acceptors in the main barriers will have higherprobability to activate. In one embodiment according to this aspect ofthe present invention, post- and prior barrier spacers are made of0.1-0.52, such as 0.2-0.4 nm-thick GaN layer, respectively. GaN post-and prior-barrier spacers enhances hole concentration within AlGaNstructure 40, hence improves LED's internal quantum efficiency.

In still another embodiment according to this aspect of the presentinvention, at least a post- and/or prior-barrier spacer is made of AlGaNthin layer with Al-composition higher than the main barrier, while atleast a post- and/or prior-barrier spacer is made of AlGaN thin layerwith Al-composition less than the well. A combination of doping andcomposition profiles of this embodiment is illustrated in FIG. 16D.Optionally, at least one post- and/or prior-barrier spacer is made ofAlN and at least one post- and/or prior-barrier spacer is made of GaN,with thickness in the range of 0.1-0.52 nm. Optionally, the at least AlNspacer is placed closer to MQW 30 than the at least GaN spacer.

The thicknesses of the well and main barrier of the above embodimentsmay still obey eq. 7.

MQW active-region is a special AlGaN heterostructure. The doping andcomposition profiles of a prior art AlGaN MQW are illustrated in FIG.19A, together with the band diagram illustrated in FIG. 19B. As seen,the interface polarization sheet charge σ₀ tilts the quantum well bandedge, spatially separating injected electrons and holes and resulting ininferior light-emitting efficiency. The interface polarization sheetcharge also tilts band edge of the quantum barriers, resulting inincreased impedance for electron and hole injection.

Another aspect of the present invention provides an MQW 30, asillustrated in FIG. 17. MQW 30 contains at least one quantum well (QW)33, being undoped or lightly Si-doped (e.g., 1.0-5.0×10¹⁷ cm⁻³), and atleast one first quantum barrier (QB) 32, one second last QB 34 formed onthe first QB 32 and one last QB 32′ formed on the second QB 34. The lastQB 32′ is undoped, and is in contact with the last QW 33 on one side andthe p-AlGaN heterostructure 40 (or other suitable p-AlGaN layer orstructure) on the other side. First QB 32 contains a uniform Si-doped(n=1.0-8.0×10¹⁸ cm⁻³) layer 321, a Si-delta doped sheet 322, and anundoped layer 323. The second last QB 34 contains a uniform Si-doped(n=1.0-8.0×10¹⁸ cm⁻³) layer 321 and an undoped layer 323. Layers 321 and323 are 6-10 nm and 2-4 nm thick, respectively. The doping andcomposition profiles of a MQW 30 according to an embodiment of thepresent invention are illustrated in FIG. 18A, and the band diagram isshown in FIG. 18B. Suppose the thickness of layer 321 is t, with a Sidoping concentration N_(D), and the Si-delta doping sheet charge densityis σ₃, and the QB/QW interface polarization sheet charge density is σ₀,then eq. 10 holds.

σ₃=σ₀ −eN _(D) t  (eq. 10)

In one embodiment, QB 32 and QW 33 are of an Al-composition differenceof 0.1 (b-w=0.1, then σ₀=5×10¹² e·cm⁻² using eq. 8), and layer 321 is 8nm-thick doped with N_(D)=5×10¹⁸ cm⁻³. According to eq. 10 of thepresent invention, a Si-delta doping sheet charge density σ₃=10¹² e·cm⁻²is preferred. As Si is a rather shallow donor in AlGaN, in an embodimentof the present invention, Si-delta doping density in layer 322 then is10¹² cm⁻².

In another embodiment, QB 32 and QW 33 are of Al-composition differenceof 0.15 (b-w=0.15, then σ₀=7.5×10¹² e·cm⁻² using eq. 8), and layer 321is 8 nm-thick doped with N_(D)=5×10¹⁸ cm⁻³. According to eq. 10 of thepresent invention, a Si-delta doping sheet charge density σ₃=3.5×10¹²e·cm⁻² is preferred. As Si is a rather shallow donor in AlGaN, thepresent invention requires Si-delta doping density in layer 322 then tobe 3.5×10¹² cm⁻².

In still another embodiment, QB 32 and QW 33 are of Al-compositiondifference of 0.2 (b-w=0.2, then σ₀=1.0×10¹³ e·cm⁻² using eq. 8), andlayer 321 is 10 nm-thick doped with N_(D)=5×10¹⁸ cm⁻³. According to eq.10 of the present invention, a Si-delta doping sheet charge densityσ₃=5.0×10¹² e·cm⁻² is preferred. As Si is a rather shallow donor inAlGaN, the present invention requires Si-delta doping density in layer322 then to be 5.0×10¹² cm⁻².

The Al-composition of QW 33, last QB 32′, layer 321, and layer 323 canbe in the range of 0.35-0.55, 0.55-0.65, 0.55-0.65, and 0.55-0.65,respectively.

The MQW active-regions designed according to this aspect of the presentinvention possess higher light-generation efficiency and lower deviceoperation voltage.

Illustrated in FIG. 20 is another embodiment of MQW 30 according to thisaspect of the present invention, containing at least a first QB 32″ anda last QB 34″ and a QW 33′ including a main QW 330 sandwiched by aprior-QW spacer 331 and a post-QW spacer 332. Some doping andcomposition profiles of MQW 30 are illustrated in FIGS. 21A-21C. Asseen, all the first QBs 32″, prior- and post-QW spacers 331 and 332 areuniformly doped with Si (n=1.0-8.0×10¹⁸ cm⁻³), all the main QWs 330 canbe undoped or doped with Si less than 5.0×10¹⁷ cm⁻³, and the last QB 34″is undoped. A post-QW spacer is in contact with its precedent main QW330 and its following QB, a prior-QW spacer is in contact with itsprecedent QB and its following main QW.

The post- and prior-QW spacers are made of n-type AlGaN with differentAl-compositions than those of the QBs and the main QWs, so that the QBand the main QW can have different interface sheet charge densities,allowing for more flexibility of designing MQW 30. Post- and prior-QWspacers are thinner than the main QW and QB. Post- and prior-QW spacersmay be of the same composition or of different composition. Thickness ofpost- and prior-QW spacers are optionally in the range of 0.1 nm to 0.52nm.

In one embodiment, the post- and prior-QW spacers are of higherAl-composition than the QB. A combination of doping and compositionprofiles of this embodiment is illustrated in FIG. 21A. In oneembodiment according to this aspect of the present invention, post- andprior-QW spacers are made of 0.1-0.52 nm-thick AlN layer.

In another embodiment, the post- and prior-QW spacers are of lowerAl-composition than the well. A combination of doping and compositionprofiles of this embodiment is illustrated in FIG. 21B. In oneembodiment according to this aspect of the present invention, post- andprior-QW spacers are made of 0.1-0.52 nm-thick GaN layer.

In still another embodiment according to this aspect of the presentinvention, at least a post- and/or prior-QW spacer is made of AlGaN thinlayer with Al-composition higher than the QB, while at least a post-and/or prior-QW spacer is made of AlGaN thin layer with Al-compositionless than the main QW. A combination of doping and composition profilesof this embodiment is illustrated in FIG. 21C. Optionally, at least onethin AlGaN spacer is made of AlN and at least one thin AlGaN spacer ismade of GaN, with thickness in the range of 0.1-0.52 nm.

The Al-composition of first QB 32″, last QB 34″, a main QW 330, prior-QWspacer 331 and post-QW spacer 332 can be in the range of 0.55-0.65,0.55-0.65, 0.35-0.55, 0.0-1.0, and 0.0-1.0, respectively.

The MQW active-regions designed according to this aspect of the presentinvention possess high light-generation efficiency and low optical powerdecay with time.

Illustrated in FIG. 22 is an N⁺-type AlGaN heterostructure 24 accordingto an embodiment of another aspect of the present invention, containinga heavily Si-doped Al-composition modulated AlGaN heterostructure. Ingeneral, heterostructure 24 can be formed by multiple AlGaN layers ofdifferent Al-composition and thickness, all heavily doped with Si to8.0×10¹⁸-2.0×10¹⁹cm⁻³. The doping and thickness of each individual layerobey eq. 7, similarly to the discussions given above in connection toFIGS. 2 and 13.

A superlattice embodiment of N⁺-type AlGaN heterostructure 24 can beformed by alternately stacking of Al_(b)Ga_(1-b)N barrier 240 andAl_(w)Ga_(1-w)N well 241 for multiple times, uniformly doped with Si ofconcentration N_(D) (cm⁻³). Therefore, the barrier and well thicknessesaccording to eqs. 7 and 8 satisfy: L_(B);

$L_{W} \leq {\left( \frac{b - w}{0.2} \right)10^{13}\frac{1}{2N_{D}} \times 10^{7}\mspace{14mu} {{nm}.}}$

For example, if b-w=0.2 and N_(D)=10¹⁹ cm⁻³, L_(B), L_(W)≤5 nm; ifb-w=0.2 and N_(D)=8×10¹⁸ cm⁻³, L_(B), L_(W)≤6.25 nm; et al.

FIG. 23A illustrates a superlattice embodiment of heterostructure 24shown in FIG. 22, where the Si-doping level is constant withinheterostructure 24. FIG. 23B illustrates band diagram of the AlGaNheterostructure 24 shown in FIG. 23A.

FIG. 24 illustrates another superlattice embodiment of heterostructure24, made of alternately stacking of barrier 242 and well 243 formultiple times, where barriers 242 contain a Si-delta doped zone 2422.

Since barrier layers of heterostructure 24 are tilted by polarizationinterface charge in a way impeding electrons' vertical transport, thebarrier layers can be thinner than the well layers in heterostructure 24where carrier vertical transport weighs more than quantum confinement.

Similar to the embodiment shown in FIG. 15, optionally, there may beprior- and post-barrier spacers before and after barrier 240 and 242(not explicitly shown in FIGS. 22 and 24). The post- and prior-barrierspacers are made of n-type AlGaN with different Al-compositions thanthose of the barrier and well, so that the barrier and well can havedifferent interface sheet charge densities, allowing for moreflexibility of designing heterostructure 24. Post- and prior-barrierspacers are thinner than the barrier and well. Post- and prior-barrierspacers may be of the same composition or of different composition.Thickness of post- and prior-barrier spacers are optionally in the rangeof 0.1 nm to 1.5 nm.

In one embodiment, the post- and prior-barrier spacers are of higherAl-composition than their main barrier. For example, post- andprior-barrier spacers can be made of 0.26-0.52 nm-thick AlN layer.

In another embodiment, the post- and prior-barrier spacers are of lowerAl-composition than the well. For example, post- and prior barrierspacers can be made of 0.1-0.52 nm-thick GaN layer.

In still another embodiment according to this aspect of the presentinvention, at least a post- and/or prior-barrier spacer is made of AlGaNthin layer with Al-composition higher than the barrier, while at least apost- and/or prior-barrier spacer is made of AlGaN thin layer withAl-composition less than the well. Optionally, at least one thin AlGaNspacer is made of AlN and at least one thin AlGaN spacer is made of GaN,with thickness in the range of 0.1-0.52 nm.

According to still another aspect of the present invention, illustratedin FIG. 25 is a cross-sectional schematic of heterostructure 498,serving as a p-type contact layer to UV LED 1 shown in FIG. 7. A p-typecontact layer of an LED is used to form contact with metal for externalelectric connection. Heterostructure 498 contains heavily Mg-dopedlayers including AlGaN layer 4981, AlGaN barrier 4982, AlInGaN well4983, and AlGaN barrier 4984, and a heavily Si-doped AlInGaN well 4985.An exemplary combination of doping and composition profiles isillustrated in FIG. 26A, with band diagram shown in FIG. 26B.

AlGaN layer 4981, in contact with the last layer of heterostructure 40or other suitable p-type AlGaN structure, or being the last layer ofheterostructure 40 or other suitable p-type AlGaN structure, possesseshigh Al-composition to ensure transparency to the UV emissions generatedby MQW 30. For example, the Al-composition and thickness of layer 4981can be in the range of 0.5-0.65 and 2.0-5.0 nm, respectively. AlGaNlayer 4981 can be p-type doped such as Mg-doped with a dopingconcentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³. Barrier 4982 has higherAl-composition than layer 4981, for example, 0.1-0.5 higher than that oflayer 4981. Barrier 4982 is optionally a thin Mg-doped AlN layer. Well4983 has small Al-composition or vanishing Al-composition, for example0.0-0.4, or optionally has no Al-composition but has In-composition. Itis desirable to have large composition discontinuity at the interface ofbarrier 4982 and well 4983, so that high-density negative sheet charge(−σ_(T2) shown in FIGS. 26A and 26B) is generated therein. High-densityinterface sheet charge is used to dramatically tilt down the band edgeof well 4983. For this purpose, according to the present invention,σ_(T2)≥3×10¹³ e·cm⁻², i.e., −σ_(T2)≤3×10¹³ e·cm⁻² is preferred. Ifbarrier 4982 and well 4983 are made of AlGaN, this requires theAl-composition difference of barrier 4982 and well 4983 to be equal toor larger than 0.6 (referring to eq. 8).

Barrier 4894 also needs to be of high Al-composition, optional to bemade of Mg-doped AlN. Well 4985 has small Al-composition or vanishingAl-composition, for example 0.0-0.4, or optionally has no Al-compositionbut has In-composition. It is desirable to have large compositiondiscontinuity at the interface of barrier 4984 and well 4985, so thathigh-density negative sheet charge (−σ_(T1) shown in FIGS. 26A and 26B)is generated therein. High-density interface sheet charge is used todramatically tilt down the band edge of well 4985. For this purpose,according to the present invention, or −σ_(T1)≥3×10¹³ e·cm⁻², i.e.,−σ_(T1)≤−3×10¹³ e·cm⁻² is preferred. If barrier 4984 and well 4985 aremade of AlGaN, this requires the Al-composition difference of barrier4984 and well 4985 to be equal to or larger than 0.6 (referring to eq.8).

With removal of Al-composition from and addition of In-composition intowells 4983 and 4985, interface sheets of high-density charge (σ_(T1),σ_(T2)»3×10¹³ e·cm⁻²) can be obtained, according to FIGS. 5B, 5C, 6B,and 6C. In this regard, barriers 4982 and 4984 are preferred to be madeof thin Mg-doped AlN, and wells 4983 and 4985 are preferred to be madeof thin GaN or InGaN (e.g., In-composition of 0.1-0.3). The thickness ofbarriers 4982 and 4984 is in the range of 0.26-2.0 nm, and the thicknessof wells 4983 and 4985 is in the range of 0.52-3.0 nm, respectively. Thethickness of barriers 4982 and 4984 may be the same or different. Thethickness of wells 4983 and 4985 may be the same or different. Theultrathin film feature of barriers 4982, 4984 and wells 4983, 4985allows for good vertical conduction for carriers injected from p-contact62 and high UV-transparency for photons generated from MQW 30. Further,well 4983 can be heavily Mg-doped, in the range of 5.0×10¹⁹-3.0×10²⁰cm⁻³, and well 4985 can be heavily Si-doped, in the range of1.0×10¹⁹-1.5×10²⁰ cm⁻³. Barriers 4982 and 4984 can be Mg-doped with adoping concentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³.

The high-density interface sheet charge will dramatically tilt down theband edge of the narrow-band-gap wells 4983 and 4985, turning wells 4983and 4985 respectively into a p⁺ layer because of hole accumulation andan n⁺ layer because of electron accumulation. As the so-formed p⁺ layer(4983) and n⁺ layer (4985) are in each other's close vicinity (onlyseparated by a thin AlN layer (4984)), and electrons in the valence bandof well 4983 see lower energy states in the conduction band of well 4985(refer to FIG. 26B), electrons in the valance band of well 4983 cantunnel to conduction band of well 4985, upon a positive electrical biason well 4985. Extracting electrons from the valence band of well 4983 isidentical to injecting holes into the valence band of well 4983. That isto say, p-type contact layer heterostructure 498 forms a tunnel junctionto provide carrier injection from p-ohmic contact 61 to p-type AlGaNheterostructure 40 hence MQW 30.

Since well 4985 is an n⁺ layer because of electron accumulation on thesurface, metals used to make p-ohmic contact 61 can be selected from alarge group of metals. In one embodiment, p-ohmic contact 61 can be madeof thin Ti/Al/Ti/Au with respective layer thickness of3-40/70-80/10-20/80-100 nm, for example 3.5/75/15/90 nm. In anotherembodiment, p-ohmic contact 61 can be made of V/Al/V/Au with respectivelayer thickness of 3-80/70-150/10-50/20-800 nm, for example4.0/100/20/60 nm (just as n-ohmic contact 51, need to claim this). Highwork function metals such as Nickel (Ni), tungsten (W), Palladium (Pd),Platinum (Pt), Iridium (Ir), Osmium (Os), Rhodium (Rh) and Molybdenum(Mo) may also be used in the p-ohmic contact. In one embodiment, p-ohmiccontact 61 is made of Ni/Rh with respective layer thickness of3-10/30-150 nm. The use of Al and Rd in p-ohmic contact 61 enhances UVreflectivity for better light extraction efficiency.

The present invention has been described using exemplary embodiments.However, it is to be understood that the scope of the present inventionis not limited to the disclosed embodiments. On the contrary, it isintended to cover various modifications and similar arrangement orequivalents which can be obtained by a person skilled in the art withoutcreative work or undue experimentation. The scope of the claims,therefore, should be accorded the broadest interpretation so as toencompass all such modifications and similar arrangements andequivalents.

1. A p-type heterostructure as p-type contact layer for a light emittingdevice or a photodetector, comprising: a first AlGaN barrier; a firstAlInGaN well formed on the first AlGaN barrier; a second AlGaN barrierformed on the first AlInGaN well; and a second AlInGaN well formed onthe second AlGaN barrier; wherein a difference between an Al-compositionof the first AlGaN barrier and an Al-composition of the first AlInGaNwell is equal to or larger than 0.6, and a difference between anAl-composition of the second AlGaN barrier and an Al-composition of thesecond AlInGaN well is equal to or larger than 0.6.
 2. The p-typecontact layer of claim 1, wherein at least one of the first AlGaNbarrier and the second AlGaN barrier are made of AlN.
 3. The p-typecontact layer of claim 1, wherein at least one of the first AlInGaN welland the second AlInGaN well are made of In_(x)Ga_(1-x)N, where x isequal to or smaller than 0.3.
 4. The p-type contact layer of claim 1,wherein a thickness of the first AlGaN barrier and a thickness of thesecond AlGaN barrier are in the range of 0.26-2.0 nm, respectively. 5.The p-type contact layer of claim 1, wherein a thickness of the firstAlInGaN well and a thickness of the second AlInGaN well are in the rangeof 0.52-3.0 nm, respectively.
 6. The p-type contact layer of claim 1,wherein the first AlInGaN well is p-type doped with a dopingconcentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³, and the second AlInGaN well isn-type doped with a doping concentration of 1.0×10¹⁹-1.5×10²⁰ cm⁻³. 7.The p-type contact layer of claim 1, wherein the first AlGaN barrier isp-type doped with a doping concentration of 5.0×10¹⁹-3.0×10²⁰ cm⁻³, andthe second AlGaN barrier is p-type doped with a doping concentration of5.0×10¹⁹-3.0×10²⁰ cm⁻³.
 8. The p-type contact layer of claim 1, furthercomprising a AlGaN layer on which the first AlGaN barrier is formed,wherein the AlGaN layer on which the first AlGaN barrier is formed hasan Al-composition lower than the Al-composition of the first AlGaNbarrier and in the range of 0.5-0.65, a thickness in the range of2.0-5.0 nm, and is p-type doped with a doping concentration of5.0×10¹⁹-3.0×10²⁰ cm⁻³.
 9. A light emitting device comprising: an n-typeAlGaN structure; a p-type AlGaN structure; an active-region sandwichedbetween the n-type AlGaN structure and the p-type AlGaN structure; and ap-type contact mechanism formed on the p-type AlGaN structure, whereinthe p-type contact mechanism comprises the p-type contact layer ofclaim
 1. 10. The light emitting device of claim 9, wherein the p-typeAlGaN structure comprises a p-type heterostructure, the p-typeheterostructure comprises one or more p-type doped AlGaN layers, each ofthe one or more p-type doped AlGaN layers containing one or more sheetsof positive charge inserted therein, wherein a distance between twoadjacent sheets of positive charge is larger than a depletion depth of adepletion zone generated by any one of the two adjacent sheets ofpositive charge.
 11. The light emitting device of claim 10, wherein thedepletion depth of a depletion zone generated by any one of the one ormore sheets of positive charge is less than 10 nm.
 12. The lightemitting device of claim 10, wherein the one or more sheets of positivecharge are formed by Si-delta doping with a sheet doping density of1×10¹¹-1×10¹³ cm⁻².
 13. The light emitting device of claim 10, whereinthe p-type doped AlGaN layer to be placed closest to an active-region ofthe light emitting device or photodetector, compared with the rest ofthe one or more p-type doped AlGaN layers, contains more sheets ofpositive charge, higher Al-composition, and larger thickness.
 14. Thelight emitting device of claim 10, wherein the p-type heterostructurefurther comprises a plurality of p-type doped AlGaN layers, which do notcontain a sheet of positive charge therein, alternately stacked with theone or more p-type doped AlGaN layers containing one or more sheets ofpositive charge, wherein an Al-composition of each of the plurality ofp-type doped AlGaN layers which do not contain a sheet of positivecharge therein is higher than an Al-composition of neighboring p-typedoped AlGaN layers containing one or more sheets of positive charge, oran Al-composition of each of the plurality of p-type doped AlGaN layerswhich do not contain a sheet of positive charge therein is lower than anAl-composition of neighboring p-type doped AlGaN layers containing oneor more sheets of positive charge.
 15. The light emitting device ofclaim 14, wherein the sheet of positive charge divides each of the oneor more p-type doped AlGaN layers containing one or more sheets ofpositive charge into a thinner prior zone and a thicker post zone. 16.The light emitting device of claim 10, wherein the p-typeheterostructure further comprises another p-type doped AlGaN layer onwhich the one or more p-type doped AlGaN layers are formed, wherein theanother p-type doped AlGaN layer has an Al-composition in the range of0.6-0.8 and a thickness in the range of 1.0-5.0 nm.
 17. The lightemitting device of claim 9, wherein the p-type AlGaN structure comprisesa p-type heterostructure, the p-type heterostructure comprisesalternately stacked p-type doped AlGaN barriers and p-type doped AlGaNwells, wherein a thickness of each of the AlGaN barriers and the AlGaNwells respectively satisfies:${h_{i} \leq {- \frac{\sigma_{i}}{2\rho_{0i}}}},$ where h_(i) is thethickness of i^(th) AlGaN barrier or well; σ_(i) is sheet charge densityof a sheet of charge on a surface of the i^(th) AlGaN barrier or well,the surface being oppositely charged in regard to net activated dopantin the i^(th) AlGaN barrier or well; and ρ_(0i)−eN_(Di)−eN_(Ai) ismaximal bulk charge density, allowed by applied doping concentration, ina depletion zone of the i^(th) AlGaN barrier or well generated by thesheet of charge, N_(Di) and N_(Ai) are donor and acceptorconcentrations, respectively, in the i^(th) AlGaN barrier or well, e iselectric elementary charge; and wherein at least one of the AlGaNbarriers comprises an AlGaN prior-barrier spacer, an AlGaN post-barrierspacer, and an AlGaN main barrier sandwiched between the AlGaNprior-barrier spacer and the AlGaN post-barrier spacer, wherein anAl-composition of the AlGaN prior-barrier spacer and an Al-compositionof the AlGaN post-barrier spacer are different than an Al-composition ofthe AlGaN main barrier, and a thickness of the AlGaN prior-barrierspacer and a thickness of the AlGaN post-barrier spacer are smaller thana thickness of the AlGaN main barrier.
 18. The light emitting device ofclaim 17, wherein a thickness of the AlGaN prior-barrier spacer and athickness of the AlGaN post-barrier spacer are in the range of 0.1 nm to1.5 nm.
 19. The light emitting device of claim 17, wherein theAl-composition of the AlGaN prior-barrier spacer and the Al-compositionof the AlGaN post-barrier spacer are higher than the Al-composition ofthe AlGaN main barrier.
 20. The light emitting device of claim 19,wherein the AlGaN prior-barrier spacer and the AlGaN post-barrier spacerare made of AlN and have a thickness in the range of 0.26-0.52 nm,respectively.
 21. The light emitting device of claim 17, wherein theAl-composition of the AlGaN prior-barrier spacer and the Al-compositionof the AlGaN post-barrier spacer are lower an Al-composition of adjacentAlGaN well.
 22. The light emitting device of claim 21, wherein the AlGaNprior-barrier spacer and the AlGaN post-barrier spacer are made of GaNand have a thickness in the range of 0.1-0.52 nm, respectively.
 23. Thelight emitting device of claim 17, wherein the Al-composition of theAlGaN prior-barrier spacer is higher than the Al-composition of theAlGaN main barrier and the Al-composition of the AlGaN post-barrierspacer is lower an Al-composition of adjacent AlGaN well; or theAl-composition of the AlGaN post-barrier spacer is higher than theAl-composition of the AlGaN main barrier and the Al-composition of theAlGaN prior-barrier spacer is lower an Al-composition of adjacent AlGaNwell.
 24. The light emitting device of claim 17, wherein the p-typeheterostructure further comprises another p-type doped AlGaN barrier onwhich the alternately stacked p-type doped AlGaN barriers and p-typedoped AlGaN wells are formed, wherein the another p-type doped AlGaNbarrier contains a main barrier, which is to be in contact with a lastquantum barrier of a MQW active-region of the light emitting device orphotodetector, and a post-barrier spacer on which a p-type doped AlGaNbarrier of the alternately stacked p-type doped AlGaN barriers andp-type doped AlGaN wells is formed.